دانلود کتاب Simulation of transport in nanodevices

Name: Simulation of transport in nanodevices
Availability: InStock
Author: Dollfus, Philippe
ISBN: 1848215665,9781848215665,9781118761779,1118761

by Dollfus, Philippe, Triozon, François

عنوان فارسی: شبیه سازی حمل و نقل در nanodevices
ناشر: Wiley-ISTE
سال: 2016
ویرایش: 1
زبان: انگلیسی
تعداد صفحه (نسخه چاپی - نسخه الکترونیکی): 396-390
شابک: 1848215665,9781848215665,9781118761779,1118761
نوع فایل: PDF دانلود نرم افزار مطالعه
حجم: 16.50 مگابایت

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Linear current-voltage pattern, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In a nanoscale circuit with reduced dimensionality in one or more of the three Cartesian directions, quantum effects transform the carrier statistics. In the high electric field, the collision free ballistic transform is predicted, while in low electric field the transport remains predominantly scattering-limited. In a micro/nano-circuit, even a low logic voltage of 1 V is above the critical voltage triggering nonohmic behavior that results in ballistic current saturation. A quantum emission may lower this ballistic velocity