دانلود کتاب Silicon-Based Material and Devices

Content: Preface, Pages xiii-xiv, Hari Singh NalwaAbout the editor, Pages xv-xviList of contributors for volume 1, Page xviiList of contributors for volume 2, Page xvChapter 1 - Optical, structural, and electrical properties of amorphous silicon carbide films, Pages 1-71, W.K. ChoiChapter 2 - Silicon carbon nitride: A new wideband gap material, Pages 73-125, L.C. Chen, K.H. Chen, J.-J. Wu, D.M. Bhusari, M.C. LinChapter 3 - Amorphous silica, Pages 127-154, Minoru TomozawaChapter 4 - Gas phase and surface kinetics of silicon chemical vapor deposition from silane and chlorosilanes, Pages 155-186, Maurizio Masi, Carlo Cavallotti, Sergio CarràChapter 5 - Growth, characterization, and physical properties of noncrystalline and nanostructured silicon-based alloys, Pages 187-235, F. Giorgis, C.F. PirriChapter 6 - Photonic and magnetic properties of spark-processed silicon, Pages 237-266, R.E. HummelChapter 7 - Wet-chemical conditioning of silicon: Electronic properties correlated with the surface morphology, Pages 267-298, H. Angermann, W. Henrion, A. RöselerChapter 1 - Optical absorption, luminescence, and ESR spectral properties of point defects in silica, Pages 1-50, M. Leone, S. Agnello, R. Boscaino, M. Cannas, F.M. GelardiChapter 2 - The refractive index of silica glass and its dependence on pressure, temperature, and the wavelength of the incident light, Pages 51-91, C.Z. Tan, J. ArndtChapter 3 - Structures and properties of amorphous silicon dioxide—Issues on the reliability and novel applications, Pages 93-122, Hiroyuki NishikawaChapter 4 - Porous silicon microcavities, Pages 123-192, Claudio Vinegoni, Massimo Cazzanelli, L. PavesiChapter 5 - Polycrystalline silicon-based thin film transistors for integrated active-matrix liquid-crystal displays, Pages 193-223, C.A. DimitriadisChapter 6 - Light emission in silicon, Pages 225-246, David J. LockwoodChapter 7 - Erbium in silicon and silicon-germanium, Pages 247-274, J.H. Evans-Freeman, A.R. PeakerIndex for volume 1, Pages 299-319Index for volume 2, Pages 275-290