جزییات کتاب
Semiconductor technology is the basis of today's microelectronics industry with its many impacts on our modern life, i.e. computer and communication technology. This two-volume handbook covers the basics of semiconductor processing technology, which are as essential for the design of new microelectronic devices as the fundamental physics. Volume 1 'Electronic Structure and Properties' covers the structure and properties of semiconductors, with particular emphasis on concepts relevant to semiconductor technology. Volume 2 'Processing of Semiconductors' deals with the enabling materials technology for the electronics industry. World-renowned authors have contributed to this unique treatment of the processing of semiconductors and related technologies. Of interest to physicists and engineers in research and in the electronics industry, this is a valuable reference source and state-of-the-art review by the world's top authors.Content: Chapter 1 Band Theory Applied to Semiconductors (pages 1–67): Michel LannooChapter 2 Optical Properties and Charge Transport (pages 69–120): R. G. UlbrichChapter 3 Intrinsic Point Defects in Semiconductors 1999 (pages 121–165): George D. WatkinsChapter 4 Deep Centers in Semiconductors (pages 167–229): Helmut FeichtingerChapter 5 Point Defects, Diffusion, and Precipitation (pages 231–290): T. Y. Tan and U. GoseleChapter 6 Dislocations (pages 291–376): Helmut Alexander and Helmar TeichlerChapter 7 Grain Boundaries in Semiconductors (pages 377–451): Jany Thibault, Jean?Luc Rouviere and Alain BourretChapter 8 Interfaces (pages 453–540): R. Hull, A. Ourmazd, W. D. Rau, P. Schwander, M. L. Green and R. T. TungChapter 9 Material Properties of Hydrogenated Amorphous Silicon (pages 541–595): R. A. Street and K. WinerChapter 10 High?Temperature Properties of Transition Elements in Silicon (pages 597–660): Wolfgang Schroter, Michael Seibt and Dieter GillesChapter 11 Fundamental Aspects of SiC (pages 661–713): Wolfgang J. Choyke and Robert P. DevatyChapter 12 New Materials: Semiconductors for Solar Cells (pages 715–769): Hans Joachim MollerChapter 13 New Materials: Gallium Nitride (pages 771–808): Eicke R. Weber, Joachim Kruger and Christian KisielowskiChapter 1 Silicon Processing (pages 1–65): John G. WilkesChapter 2 Compound Semiconductor Processing (pages 67–109): J. Brian MullinChapter 3 Epitaxial Growth (pages 111–176): Thomas E Kuech and Michael A. TischlerChapter 4 Photolithography (pages 177–263): Rainer Leuschner and Georg PawlowskiChapter 5 Selective Doping (pages 265–289): Subhash MahajanChapter 6 Etching Processes in Semiconductor Manufacturing (pages 291–339): Kevin G. Oonohoe, Terry Turner and Kenneth A. JacksonChapter 7 Silicon Device Structures (pages 341–390): Chun?Yen Chang and Simon M. SzeChapter 8 Compound Semiconductor Device Structures (pages 391–406): William E. Stanchina and Juan E LamChapter 9 Silicon Device Processing (pages 407–487): Dim?Lee KwongChapter 10 Compound Semiconductor Device Processing (pages 489–605): John M. ParseyChapter 11 Integrated Circuit Packaging (pages 607–647): Daniel I. AmeyChapter 12 Interconnection Systems (pages 649–681): Wulf Knausenberger